Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SI7370ADP-T1-GE3
RFQ
VIEW
RFQ
2,279
In-stock
Vishay Siliconix MOSFET N-CH 60V 50A PPAK SO-8 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 5.2W (Ta), 69.4W (Tc) N-Channel - 60V 50A (Tc) 10 mOhm @ 12A, 10V 4.5V @ 250µA 70nC @ 10V 2850pF @ 30V 6V, 10V ±20V
SIR626DP-T1-RE3
RFQ
VIEW
RFQ
1,599
In-stock
Vishay Siliconix MOSFET N-CH 60V 100A POWERPAKSO TrenchFET® Gen IV Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 104W (Tc) N-Channel - 60V 100A (Tc) 1.7 mOhm @ 20A, 10V 3.4V @ 250µA 78nC @ 7.5V 5130pF @ 30V 6V, 10V ±20V
SI7370DP-T1-E3
RFQ
VIEW
RFQ
2,049
In-stock
Vishay Siliconix MOSFET N-CH 60V 9.6A PPAK SO-8 TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 1.9W (Ta) N-Channel - 60V 9.6A (Ta) 11 mOhm @ 12A, 10V 4V @ 250µA 57nC @ 10V - 6V, 10V ±20V
SIR186DP-T1-RE3
RFQ
VIEW
RFQ
897
In-stock
Vishay Siliconix MOSFET N-CH 60V 60A POWERPAKSO-8 TrenchFET® Gen IV Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 57W (Tc) N-Channel - 60V 60A (Tc) 4.5 mOhm @ 15A, 10V 3.6V @ 250µA 37nC @ 10V 1710pF @ 30V 6V, 10V ±20V