Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPB05CN10N G
RFQ
VIEW
RFQ
2,188
In-stock
Infineon Technologies MOSFET N-CH 100V 100A TO263-3 OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 300W (Tc) N-Channel - 100V 100A (Tc) 5.1 mOhm @ 100A, 10V 4V @ 250µA 181nC @ 10V 12000pF @ 50V 10V ±20V
SUM90P10-19-E3
RFQ
VIEW
RFQ
1,968
In-stock
Vishay Siliconix MOSFET P-CH 100V 90A D2PAK TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D2Pak) 13.6W (Ta), 375W (Tc) P-Channel - 100V 90A (Tc) 19 mOhm @ 20A, 10V 4.5V @ 250µA 330nC @ 10V 12000pF @ 50V 10V ±20V
CSD19536KTTT
RFQ
VIEW
RFQ
1,069
In-stock
Texas Instruments MOSFET N-CH 100V 200A TO263 NexFET™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-4, D²Pak (3 Leads + Tab), TO-263AA DDPAK/TO-263-3 375W (Tc) N-Channel - 100V 200A (Ta) 2.4 mOhm @ 100A, 10V 3.2V @ 250µA 153nC @ 10V 12000pF @ 50V 6V, 10V ±20V
CSD19536KTT
RFQ
VIEW
RFQ
1,901
In-stock
Texas Instruments MOSFET N-CH 100V 200A TO263 NexFET™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-4, D²Pak (3 Leads + Tab), TO-263AA DDPAK/TO-263-3 375W (Tc) N-Channel - 100V 200A (Ta) 2.4 mOhm @ 100A, 10V 3.2V @ 250µA 153nC @ 10V 12000pF @ 50V 6V, 10V ±20V