- Manufacture :
- Series :
- Part Status :
- Technology :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,016
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 100V 6A 8SOIC | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 3.1W (Ta) | N-Channel | - | 100V | 6A (Ta) | 37 mOhm @ 6A, 10V | 2.7V @ 250µA | 44nC @ 10V | 2000pF @ 50V | 4.5V, 10V | ±20V | |||
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VIEW |
2,689
In-stock
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EPC | TRANS GAN 100V 6A BUMPED DIE | eGaN® | Obsolete | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die Outline (5-Solder Bar) | - | N-Channel | - | 100V | 6A (Ta) | 30 mOhm @ 6A, 5V | 2.5V @ 1.2mA | 2.8nC @ 5V | 205pF @ 50V | 5V | +6V, -5V | |||
|
VIEW |
3,690
In-stock
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ON Semiconductor | MOSFET N-CH 100V 6A 8SOIC | PowerTrench® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 100V | 6A (Ta) | 35 mOhm @ 6A, 10V | 4V @ 250µA | 25nC @ 10V | 1300pF @ 25V | 6V, 10V | ±20V | |||
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|
VIEW |
1,025
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 100V 6A 8SOIC | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 3.1W (Ta) | N-Channel | - | 100V | 6A (Ta) | 37 mOhm @ 6A, 10V | 2.7V @ 250µA | 44nC @ 10V | 2000pF @ 50V | 4.5V, 10V | ±20V | |||
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|
VIEW |
1,625
In-stock
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EPC | TRANS GAN 100V 6A BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (5-Solder Bar) | - | N-Channel | - | 100V | 6A (Ta) | 30 mOhm @ 6A, 5V | 2.5V @ 1.2mA | 2.2nC @ 5V | 220pF @ 50V | 5V | +6V, -4V | |||
