Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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DMN10H170SFDE-13
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701
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Diodes Incorporated MOSFET N-CH 100V 2.9A 6UDFN - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad U-DFN2020-6 (Type E) 660mW (Ta) N-Channel 100V 2.9A (Ta) 160 mOhm @ 5A, 10V 3V @ 250µA 9.7nC @ 10V 1167pF @ 25V 4.5V, 10V ±20V
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RFQ
1,106
In-stock
Diodes Incorporated MOSFET N-CH 100V 2.9A 6UDFN - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad U-DFN2020-6 (Type E) 660mW (Ta) N-Channel 100V 2.9A (Ta) 160 mOhm @ 5A, 10V 3V @ 250µA 9.7nC @ 10V 1167pF @ 25V 4.5V, 10V ±20V
DMN10H170SFDE-7
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RFQ
2,417
In-stock
Diodes Incorporated MOSFET N-CH 100V 2.9A 6UDFN - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UDFN Exposed Pad U-DFN2020-6 (Type E) 660mW (Ta) N-Channel 100V 2.9A (Ta) 160 mOhm @ 5A, 10V 3V @ 250µA 9.7nC @ 10V 1167pF @ 25V 4.5V, 10V ±20V