- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,969
In-stock
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Infineon Technologies | MOSFET N-CH 20V 16A DIRECTFET | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ST | DIRECTFET™ ST | 1.4W (Ta), 42W (Tc) | N-Channel | - | 20V | 16A (Ta), 55A (Tc) | 5.7 mOhm @ 15A, 10V | 2.2V @ 250µA | 17nC @ 4.5V | 1360pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
2,260
In-stock
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Infineon Technologies | MOSFET N-CH 20V 18A DIRECTFET | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ST | DIRECTFET™ ST | 2.2W (Ta), 42W (Tc) | N-Channel | - | 20V | 18A (Ta), 81A (Tc) | 4.5 mOhm @ 18A, 10V | 2.45V @ 250µA | 27nC @ 4.5V | 2420pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
2,395
In-stock
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Infineon Technologies | MOSFET N-CH 20V 27A DIRECTFET | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | DIRECTFET™ MX | 2.8W (Ta), 89W (Tc) | N-Channel | - | 20V | 27A (Ta), 150A (Tc) | 2.7 mOhm @ 27A, 10V | 2.45V @ 250µA | 42nC @ 4.5V | 4130pF @ 10V | 4.5V, 10V | ±20V | |||
