- Manufacture :
- Package / Case :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,864
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 6.5A EMH8 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-EMH | 1.5W (Ta) | P-Channel | - | 20V | 6.5A (Ta) | 26 mOhm @ 3A, 4.5V | - | 13nC @ 4.5V | 1100pF @ 10V | 1.8V, 4.5V | ±10V | |||
|
VIEW |
1,139
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 9.5A UF6 | U-MOSV | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 | 1W (Ta) | P-Channel | - | 20V | 9.5A (Ta) | 22.1 mOhm @ 3A, 4.5V | 1V @ 1mA | 15nC @ 4.5V | 1100pF @ 10V | 1.5V, 4.5V | ±8V | |||
