Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SCH1333-TL-H
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RFQ
2,489
In-stock
ON Semiconductor MOSFET P-CH 20V 2A SCH6 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-563, SOT-666 6-SCH 800mW (Ta) P-Channel - 20V 2A (Ta) 130 mOhm @ 1A, 4.5V - 3.3nC @ 4.5V 250pF @ 10V 1.8V, 4.5V ±10V
SSM3J108TU(TE85L)
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RFQ
2,108
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 1.8A UFM U-MOSIII Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 3-SMD, Flat Leads UFM 500mW (Ta) P-Channel - 20V 1.8A (Ta) 158 mOhm @ 800mA, 4V 1V @ 1mA - 250pF @ 10V 1.8V, 4V ±8V
CPH3356-TL-H
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RFQ
2,634
In-stock
ON Semiconductor MOSFET P-CH 20V 2.5A CPH3 - Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 3-CPH 1W (Ta) P-Channel - 20V 2.5A (Ta) 137 mOhm @ 1A, 4.5V - 3.3nC @ 4.5V 250pF @ 10V 1.8V, 4.5V ±10V
SSM5G10TU(TE85L,F)
RFQ
VIEW
RFQ
733
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 1.5A UFV U-MOSIII Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-SMD (5 Leads), Flat Lead UFV 500mW (Ta) P-Channel Schottky Diode (Isolated) 20V 1.5A (Ta) 213 mOhm @ 1A, 4V 1V @ 1mA 6.4nC @ 4V 250pF @ 10V 1.8V, 4V ±8V
CPH3356-TL-W
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RFQ
1,520
In-stock
ON Semiconductor MOSFET P-CH 20V 2.5A CPH3 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 3-CPH 1W (Ta) P-Channel - 20V 2.5A (Ta) 137 mOhm @ 1A, 4.5V 1.4V @ 1mA 3.3nC @ 4.5V 250pF @ 10V 1.8V, 4.5V ±10V