Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RQ3C150BCTB
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937
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Rohm Semiconductor MOSFET P-CHANNEL 20V 30A 8HSMT - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-HSMT (3.2x3) 20W (Tc) P-Channel - 20V 30A (Tc) 6.7 mOhm @ 15A, 4.5V 1.2V @ 1mA 60nC @ 4.5V 4800pF @ 10V 4.5V ±8V
TPH1R712MD,L1Q
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RFQ
2,334
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Toshiba Semiconductor and Storage MOSFET P-CH 20V 60A 8SOP ADV U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 78W (Tc) P-Channel - 20V 60A (Tc) 1.7 mOhm @ 30A, 4.5V 1.2V @ 1mA 182nC @ 5V 10900pF @ 10V 2.5V, 4.5V ±12V
STL9P2UH7
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RFQ
2,110
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STMicroelectronics MOSFET P-CH 20V 9A POWERFLAT STripFET™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN PowerFlat™ (3.3x3.3) 2.9W (Tc) P-Channel - 20V 9A (Tc) 22.5 mOhm @ 4.5A, 4.5V 1V @ 250µA 22nC @ 4.5V 2390pF @ 16V 1.5V, 4.5V ±8V
TPN4R712MD,L1Q
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RFQ
2,757
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Toshiba Semiconductor and Storage MOSFET P-CH 20V 36A 8TSON ADV U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 42W (Tc) P-Channel - 20V 36A (Tc) 4.7 mOhm @ 18A, 4.5V 1.2V @ 1mA 65nC @ 5V 4300pF @ 10V 2.5V, 4.5V ±12V