Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET N-CH 100V 6PQFN - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 6-VDFN Exposed Pad 6-PQFN (2x2) 11.5W (Tc) N-Channel - 100V 11A (Tc) 42 mOhm @ 6.7A, 10V 2.3V @ 10µA 5.6nC @ 4.5V 440pF @ 50V 4.5V, 10V ±20V
CSD16409Q3
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Texas Instruments MOSFET N-CH 25V 60A 8-SON NexFET™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-VSONP (5x6) 2.6W (Ta) N-Channel - 25V 15A (Ta), 60A (Tc) 8.2 mOhm @ 17A, 10V 2.3V @ 250µA 5.6nC @ 4.5V 800pF @ 12.5V 4.5V, 10V +16V, -12V