- Part Status :
- Operating Temperature :
- Package / Case :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,954
In-stock
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Infineon Technologies | MOSFET NCH 100V 23A PQFN | FASTIRFET™, HEXFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 4W (Ta), 195W (Tc) | N-Channel | - | 100V | 23A (Ta), 157A (Tc) | 3.9 mOhm @ 50A, 10V | 3.6V @ 250µA | 74nC @ 10V | 3120pF @ 50V | 10V | ±20V | |||
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VIEW |
3,209
In-stock
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Infineon Technologies | MOSFET N-CH 80V 26A | FASTIRFET™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | - | 8-VQFN | 8-PQFN (5x6) | 4W (Ta), 195W (Tc) | N-Channel | - | 80V | 26A (Ta) | 3.1 mOhm @ 50A, 10V | 3.6V @ 250µA | 74nC @ 10V | 3186pF @ 40V | 10V | ±20V | |||
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VIEW |
3,480
In-stock
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Infineon Technologies | MOSFET NCH 100V 58A PQFN | Automotive, AEC-Q101, HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 4.3W (Ta), 125W (Tc) | N-Channel | - | 100V | 58A (Tc) | 14.5 mOhm @ 35A, 10V | 4V @ 100µA | 74nC @ 10V | 3050pF @ 25V | 10V | ±20V |