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- Power Dissipation (Max) :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
836
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 6.5A DPAK | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 1.25W (Ta), 16.7W (Tc) | N-Channel | 100V | 6.5A (Tc) | 200 mOhm @ 3A, 10V | 3V @ 250µA | 4nC @ 5V | 240pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,675
In-stock
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Vishay Siliconix | MOSFET N-CH 100V 6.5A DPAK | TrenchFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 1.25W (Ta), 20W (Tc) | N-Channel | 100V | 6.5A (Tc) | 200 mOhm @ 3A, 10V | 3V @ 250µA | 4nC @ 5V | 240pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,007
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CH 100V 6.5A SOT223 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 9W (Tc) | N-Channel | 100V | 6.5A (Tc) | 95 mOhm @ 5A, 10V | 2.5V @ 250µA | 9.3nC @ 10V | 1480pF @ 50V | 4.5V, 10V | ±20V |