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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	2SK2883(TE24L,Q)	RFQ VIEW	PDF RFQ	2,955 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 800V 3A TO220SM		-	Obsolete	Tape & Reel (TR)	MOSFET (Metal Oxide)	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-220SM	75W (Tc)	N-Channel	800V	3A (Ta)	3.6 Ohm @ 1.5A, 10V	4V @ 1mA	25nC @ 10V	750pF @ 25V	10V	±30V
	BSP300L6327HUSA1	RFQ VIEW	PDF RFQ	2,999 In-stock	Infineon Technologies	MOSFET N-CH 800V 190MA SOT-223		SIPMOS®	Obsolete	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4	1.8W (Ta)	N-Channel	800V	190mA (Ta)	20 Ohm @ 190mA, 10V	4V @ 1mA	-	230pF @ 25V	10V	±20V
	BSP300 E6327	RFQ VIEW	PDF RFQ	3,753 In-stock	Infineon Technologies	MOSFET N-CH 800V 190MA SOT-223		SIPMOS®	Discontinued at Digi-Key	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4	1.8W (Ta)	N-Channel	800V	190mA (Ta)	20 Ohm @ 190mA, 10V	4V @ 1mA	-	230pF @ 25V	10V	±20V
	BSP300H6327XUSA1	RFQ VIEW	PDF RFQ	3,929 In-stock	Infineon Technologies	MOSFET N-CH 800V 190MA SOT-223		SIPMOS®	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4	1.8W (Ta)	N-Channel	800V	190mA (Ta)	20 Ohm @ 190mA, 10V	4V @ 1mA	-	230pF @ 25V	10V	±20V

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