- Part Status :
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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,955
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 800V 3A TO220SM | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220SM | 75W (Tc) | N-Channel | 800V | 3A (Ta) | 3.6 Ohm @ 1.5A, 10V | 4V @ 1mA | 25nC @ 10V | 750pF @ 25V | 10V | ±30V | |||
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VIEW |
2,999
In-stock
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Infineon Technologies | MOSFET N-CH 800V 190MA SOT-223 | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | 800V | 190mA (Ta) | 20 Ohm @ 190mA, 10V | 4V @ 1mA | - | 230pF @ 25V | 10V | ±20V | |||
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VIEW |
3,753
In-stock
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Infineon Technologies | MOSFET N-CH 800V 190MA SOT-223 | SIPMOS® | Discontinued at Digi-Key | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | 800V | 190mA (Ta) | 20 Ohm @ 190mA, 10V | 4V @ 1mA | - | 230pF @ 25V | 10V | ±20V | |||
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VIEW |
3,929
In-stock
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Infineon Technologies | MOSFET N-CH 800V 190MA SOT-223 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | 800V | 190mA (Ta) | 20 Ohm @ 190mA, 10V | 4V @ 1mA | - | 230pF @ 25V | 10V | ±20V |