Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SIHP30N60E-GE3
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Vishay Siliconix MOSFET N-CH 600V 29A TO220AB E Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 250W (Tc) N-Channel - 600V 29A (Tc) 125 mOhm @ 15A, 10V 4V @ 250µA 130nC @ 10V 2600pF @ 100V 10V ±30V
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1,646
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Vishay Siliconix MOSFET N-CH 650V 24A TO263 E Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) 250W (Tc) N-Channel - 650V 24A (Tc) 145 mOhm @ 12A, 10V 4V @ 250µA 122nC @ 10V 2740pF @ 100V 10V ±30V
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Vishay Siliconix MOSFET N-CH 650V 24A TO263 E Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263 (D²Pak) 250W (Tc) N-Channel - 650V 24A (Tc) 145 mOhm @ 12A, 10V 4V @ 250µA 122nC @ 10V 2740pF @ 100V 10V ±30V
SIHP065N60E-GE3
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1,588
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Vishay Siliconix MOSFET N-CH 600V 40A TO220AB E Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 250W (Tc) N-Channel - 600V 40A (Tc) 65 mOhm @ 16A, 10V 5V @ 250µA 98nC @ 10V 2700pF @ 100V 10V ±30V