Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STH12N120K5-2
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3,567
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STMicroelectronics MOSFET N-CH 1200V 12A H2PAK-2 MDmesh™ K5 Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB H2Pak-2 250W (Tc) N-Channel - 1200V 12A (Tc) 690 mOhm @ 6A, 10V 5V @ 100µA 44.2nC @ 10V 1370pF @ 100V 10V ±30V
STH130N10F3-2
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640
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STMicroelectronics MOSFET N-CH 100V 120A H2PAK-2 STripFET™ III Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB H2Pak-2 250W (Tc) N-Channel - 100V 120A (Tc) 9.3 mOhm @ 60A, 10V 4V @ 250µA 57nC @ 10V 3305pF @ 25V 10V ±20V
STH170N8F7-2
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3,553
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STMicroelectronics MOSFET N-CH 80V 120A STripFET™ F7 Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB H2Pak-2 250W (Tc) N-Channel - 80V 120A (Tc) 3.7 mOhm @ 60A, 10V 4.5V @ 250µA 120nC @ 10V 8710pF @ 40V 10V ±20V
STH150N10F7-2
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1,596
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STMicroelectronics MOSFET N-CH 100V 90A H2PAK-2 DeepGATE™, STripFET™ VII Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB H2Pak-2 250W (Tc) N-Channel - 100V 110A (Tc) 3.9 mOhm @ 55A, 10V 4.5V @ 250µA 117nC @ 10V 8115pF @ 50V 10V ±20V