Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STB100NH02LT4
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2,319
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STMicroelectronics MOSFET N-CH 24V 60A D2PAK STripFET™ III Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 100W (Tc) N-Channel - 24V 60A (Tc) 6 mOhm @ 30A, 10V 1.8V @ 250µA 64nC @ 10V 2850pF @ 15V 5V, 10V ±20V
IPB50N10S3L16ATMA1
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3,476
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Infineon Technologies MOSFET N-CH 100V 50A TO263-3 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 100W (Tc) N-Channel - 100V 50A (Tc) 15.4 mOhm @ 50A, 10V 2.4V @ 60µA 64nC @ 10V 4180pF @ 25V 4.5V, 10V ±20V
R5021ANJTL
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1,508
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Rohm Semiconductor MOSFET N-CH 10V DRIVE LPTS - Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB LPTS 100W (Tc) N-Channel - 500V 21A (Tc) 220 mOhm @ 10.5A, 10V 4.5V @ 1mA 64nC @ 10V 2300pF @ 25V - -
IPD50N10S3L16ATMA1
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2,184
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Infineon Technologies MOSFET N-CH 100V 50A TO252-3 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 100W (Tc) N-Channel - 100V 50A (Tc) 15 mOhm @ 50A, 10V 2.4V @ 60µA 64nC @ 10V 4180pF @ 25V 4.5V, 10V ±20V