Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SSM3J338R,LF
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2,682
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Toshiba Semiconductor and Storage MOSFET P-CH 12V 6A SOT23F U-MOSVII Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 12V 6A (Ta) 17.6 mOhm @ 6A, 8V 1V @ 1mA 19.5nC @ 4.5V 1400pF @ 6V 1.8V, 8V ±10V
SSM6H19NU,LF
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2,628
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Toshiba Semiconductor and Storage MOSFET N-CH 40V 2A 6UDFN U-MOSVII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-UDFN Exposed Pad 6-UDFN (2x2) 1W (Ta) N-Channel - 40V 2A (Ta) 185 mOhm @ 1A, 8V 1.2V @ 1mA 2.2nC @ 4.2V 130pF @ 10V 1.8V, 8V ±12V
SSM3K59CTB,L3F
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2,555
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Toshiba Semiconductor and Storage MOSFET N-CH 40V 2A CST3B U-MOSVII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 3-SMD, No Lead CST3B 1W (Ta) N-Channel - 40V 2A (Ta) 215 mOhm @ 1A, 8V 1.2V @ 1mA 1.1nC @ 4.2V 130pF @ 10V 1.8V, 8V ±12V
SSM3K339R,LF
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RFQ
1,682
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Toshiba Semiconductor and Storage MOSFET N-CH 40V 2A SOT-23F U-MOSVII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) N-Channel - 40V 2A (Ta) 185 mOhm @ 1A, 8V 1.2V @ 1mA 1.1nC @ 4.2V 130pF @ 10V 1.8V, 8V ±12V
SSM3J358R,LF
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1,880
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Toshiba Semiconductor and Storage SMALL LOW ON RESISTANCE MOSFET U-MOSVII Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 20V 6A (Ta) 22.1 mOhm @ 6A, 8V 1V @ 1mA 38.5nC @ 8V 1331pF @ 10V 1.8V, 8V ±10V