Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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AUIRFL014NTR
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2,075
In-stock
Infineon Technologies MOSFET N-CH 55V 1.5A SOT-223 HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1W (Ta) N-Channel - 55V 1.5A (Ta) 160 mOhm @ 1.9A, 10V 4V @ 250µA 11nC @ 10V 190pF @ 25V 10V ±20V
TPC8022-H(TE12LQ,M
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RFQ
1,937
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 40V 7.5A SOP8 2-6J1B - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.173", 4.40mm Width) 8-SOP (5.5x6.0) 1W (Ta) N-Channel - 40V 7.5A (Ta) 27 mOhm @ 3.8A, 10V 2.3V @ 1mA 11nC @ 10V 650pF @ 10V 4.5V, 10V ±20V
TPC8021-H(TE12LQ,M
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RFQ
2,214
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 30V 11A SOP8 2-6J1B - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.173", 4.40mm Width) 8-SOP (5.5x6.0) 1W (Ta) N-Channel - 30V 11A (Ta) 17 mOhm @ 5.5A, 10V 2.3V @ 1mA 11nC @ 10V 640pF @ 10V 4.5V, 10V ±20V
IRFL014NTRPBF
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RFQ
3,733
In-stock
Infineon Technologies MOSFET N-CH 55V 1.9A SOT223 HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1W (Ta) N-Channel - 55V 1.9A (Ta) 160 mOhm @ 1.9A, 10V 4V @ 250µA 11nC @ 10V 190pF @ 25V 10V ±20V