Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SSM6J409TU(TE85L,F
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1,139
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Toshiba Semiconductor and Storage MOSFET P-CH 20V 9.5A UF6 U-MOSV Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-SMD, Flat Leads UF6 1W (Ta) P-Channel - 20V 9.5A (Ta) 22.1 mOhm @ 3A, 4.5V 1V @ 1mA 15nC @ 4.5V 1100pF @ 10V 1.5V, 4.5V ±8V
DMS3014SFGQ-13
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3,410
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Diodes Incorporated MOSFET BVDSS: 25V30V POWERDI333 Automotive, AEC-Q101 Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PowerDI3333-8 1W (Ta) N-Channel - 30V 9.5A (Ta) 14.5 mOhm @ 10.4A, 10V 2.2V @ 250µA 19.3nC @ 10V 4310pF @ 15V 4.5V, 10V ±12V
DMS3014SFGQ-7
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2,889
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Diodes Incorporated MOSFET BVDSS: 25V30V POWERDI333 Automotive, AEC-Q101 Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PowerDI3333-8 1W (Ta) N-Channel - 30V 9.5A (Ta) 14.5 mOhm @ 10.4A, 10V 2.2V @ 250µA 19.3nC @ 10V 4310pF @ 15V 4.5V, 10V ±12V
DMS3014SFG-7
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3,285
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Diodes Incorporated MOSFET N-CH 30V 9.5A POWERDI - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN PowerDI3333-8 1W (Ta) N-Channel Schottky Diode (Body) 30V 9.5A (Ta) 13 mOhm @ 10.4A, 10V 2.2V @ 250µA 45.7nC @ 10V 4310pF @ 15V 1.8V, 4.5V ±12V