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- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
2,788
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 10A 8SOP | U-MOSV-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | N-Channel | Schottky Diode (Body) | 30V | 10A (Ta) | 13.3 mOhm @ 5A, 10V | 2.3V @ 1mA | 15nC @ 10V | 1700pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,731
In-stock
|
ON Semiconductor | MOSFET N-CH 30V WLCSP 1X1 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 125°C (TJ) | Surface Mount | 4-UFBGA, WLCSP | 4-WLCSP (1x1) | 1W (Ta) | N-Channel | Schottky Diode (Body) | 30V | 1.1A (Ta) | 462 mOhm @ 300mA, 4.5V | 1.5V @ 250µA | 1nC @ 4.5V | 85pF @ 15V | 3.2V, 4.5V | +5.5V, -0.3V | |||
|
VIEW |
3,285
In-stock
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Diodes Incorporated | MOSFET N-CH 30V 9.5A POWERDI | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 1W (Ta) | N-Channel | Schottky Diode (Body) | 30V | 9.5A (Ta) | 13 mOhm @ 10.4A, 10V | 2.2V @ 250µA | 45.7nC @ 10V | 4310pF @ 15V | 1.8V, 4.5V | ±12V | |||
