Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
BSS192PH6327XTSA1
RFQ
VIEW
RFQ
2,146
In-stock
Infineon Technologies MOSFET P-CH 250V 190MA SOT89 SIPMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-243AA PG-SOT89 1W (Ta) P-Channel - 250V 190mA (Ta) 12 Ohm @ 190mA, 10V 2V @ 130µA 6.1nC @ 10V 104pF @ 25V 2.8V, 10V ±20V
BSS87H6327XTSA1
RFQ
VIEW
RFQ
2,166
In-stock
Infineon Technologies MOSFET N-CH 240V 260MA SOT89 SIPMOS™ Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-243AA PG-SOT89-4-2 1W (Ta) N-Channel - 240V 260mA (Ta) 6 Ohm @ 260mA, 10V 1.8V @ 108µA 5.5nC @ 10V 97pF @ 25V 4.5V, 10V ±20V
BSS225H6327XTSA1
RFQ
VIEW
RFQ
1,927
In-stock
Infineon Technologies MOSFET N-CH 600V 90MA SOT89 SIPMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-243AA PG-SOT89 1W (Ta) N-Channel - 600V 90mA (Ta) 45 Ohm @ 90mA, 10V 2.3V @ 94µA 5.8nC @ 10V 131pF @ 25V 4.5V, 10V ±20V