- Part Status :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,341
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 18A 8-SOP | U-MOSIV | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | N-Channel | - | 30V | 18A (Ta) | 3.4 mOhm @ 9A, 10V | 2.5V @ 1mA | 56nC @ 10V | 2900pF @ 10V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,108
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 10A SOP8 2-6J1B | U-MOSIV | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | P-Channel | - | 20V | 10A (Ta) | 10 mOhm @ 5A, 4.5V | 1.2V @ 200µA | 115nC @ 5V | 9130pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
2,641
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 10A | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 | 1W (Ta) | N-Channel | - | 20V | 10A (Ta) | 12 mOhm @ 7A, 4.5V | 1.2V @ 1mA | 9.4nC @ 4.5V | 710pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
2,871
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 38V 2A | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 38V | 2A (Ta) | 150 mOhm @ 2A, 10V | 1.7V @ 1mA | 3nC @ 10V | 120pF @ 10V | 4V, 10V | ±20V | |||
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VIEW |
1,090
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 2.5A TSM | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 60V | 2.5A (Ta) | 107 mOhm @ 2A, 10V | 2.8V @ 1mA | 7nC @ 10V | 235pF @ 30V | 4.5V, 10V | ±20V | |||
