Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TPC8092,LQ(S
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693
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 15A 8SOP U-MOSVII Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOP 1W (Ta) N-Channel - 30V 15A (Ta) 9 mOhm @ 7.5A, 10V 2.3V @ 200µA 25nC @ 10V 1800pF @ 10V 4.5V, 10V ±20V
SSM3J355R,LF
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1,045
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Toshiba Semiconductor and Storage SMALL LOW ON RESISTANCE MOSFET U-MOSVII Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 20V 6A (Ta) 30.1 mOhm @ 4A, 4.5V 1V @ 1mA 16.6nC @ 4.5V 1030pF @ 10V 1.8V, 4.5V ±10V
SSM3J338R,LF
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2,682
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Toshiba Semiconductor and Storage MOSFET P-CH 12V 6A SOT23F U-MOSVII Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 12V 6A (Ta) 17.6 mOhm @ 6A, 8V 1V @ 1mA 19.5nC @ 4.5V 1400pF @ 6V 1.8V, 8V ±10V
SSM3J358R,LF
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RFQ
1,880
In-stock
Toshiba Semiconductor and Storage SMALL LOW ON RESISTANCE MOSFET U-MOSVII Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 20V 6A (Ta) 22.1 mOhm @ 6A, 8V 1V @ 1mA 38.5nC @ 8V 1331pF @ 10V 1.8V, 8V ±10V