- Manufacture :
- Series :
- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,195
In-stock
|
Diodes Incorporated | MOSFET N-CHAN 41V 60V X1-DFN1006 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-UFDFN | X1-DFN1006-3 | 500mW (Ta) | N-Channel | - | 60V | 320mA (Ta) | 2 Ohm @ 100mA, 4V | 1V @ 250µA | 0.9nC @ 4.5V | 64pF @ 25V | 1.5V, 4V | ±20V | |||
|
VIEW |
3,119
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.8A UFM | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 20V | 1.8A (Ta) | 149 mOhm @ 600mA, 4V | 1V @ 1mA | 7.7nC @ 4V | 331pF @ 10V | 1.5V, 4V | ±8V | |||
|
|
VIEW |
2,731
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.8A UFM | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 20V | 1.8A (Ta) | 149 mOhm @ 600mA, 4V | 1V @ 1mA | 7.7nC @ 4V | 331pF @ 10V | 1.5V, 4V | ±8V | |||
|
VIEW |
3,072
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 4.2A | U-MOSIII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 | 500mW (Ta) | N-Channel | - | 20V | 4.2A (Ta) | 28 mOhm @ 3A, 4V | 1V @ 1mA | 16.8nC @ 4V | 1050pF @ 10V | 1.5V, 4V | ±10V | |||
|
|
VIEW |
3,061
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4A UFM | U-MOSIV | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 20V | 4A (Ta) | 38 mOhm @ 3A, 4V | 1V @ 1mA | 22.3nC @ 4V | 1484pF @ 10V | 1.5V, 4V | ±8V | |||
|
|
VIEW |
2,701
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 4.2A UFM | U-MOSIII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | N-Channel | - | 20V | 4.2A (Ta) | 28 mOhm @ 3A, 4V | 1V @ 1mA | 13.6nC @ 4V | 1010pF @ 10V | 1.5V, 4V | ±10V | |||
