Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FQB13N10LTM
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1,564
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ON Semiconductor MOSFET N-CH 100V 12.8A D2PAK QFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 3.75W (Ta), 65W (Tc) N-Channel - 100V 12.8A (Tc) 180 mOhm @ 6.4A, 10V 2V @ 250µA 12nC @ 5V 520pF @ 25V 5V, 10V ±20V
IRL520STRR
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860
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Vishay Siliconix MOSFET N-CH 100V 9.2A D2PAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.7W (Ta), 60W (Tc) N-Channel - 100V 9.2A (Tc) 270 mOhm @ 5.5A, 5V 2V @ 250µA 12nC @ 5V 490pF @ 25V 4V, 5V ±10V
IRL520STRL
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RFQ
3,882
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Vishay Siliconix MOSFET N-CH 100V 9.2A D2PAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.7W (Ta), 60W (Tc) N-Channel - 100V 9.2A (Tc) 270 mOhm @ 5.5A, 5V 2V @ 250µA 12nC @ 5V 490pF @ 25V 4V, 5V ±10V
PHB66NQ03LT,118
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2,757
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Nexperia USA Inc. MOSFET N-CH 25V 66A D2PAK TrenchMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 93W (Tc) N-Channel - 25V 66A (Tc) 10.5 mOhm @ 25A, 10V 2V @ 1mA 12nC @ 5V 860pF @ 25V 10V ±20V