- Series :
- Operating Temperature :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
2,832
In-stock
|
Toshiba Semiconductor and Storage | SMALL-SIGNAL NCH MOSFET SOT23F Q | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1.2W (Ta) | N-Channel | - | 100V | 3.5A (Ta) | 69 mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2nC @ 4.5V | 430pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
2,151
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 3.5A 2-3Z1A | U-MOSIII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 30V | 3.5A (Ta) | 126 mOhm @ 1A, 4V | 1V @ 1mA | 1.5nC @ 4V | 123pF @ 15V | 1.8V, 4V | ±12V | ||||
VIEW |
3,157
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 60V 3.5A SOT23F | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 2W (Ta) | P-Channel | - | 60V | 3.5A (Ta) | 134 mOhm @ 1A, 10V | 2V @ 1mA | 15.1nC @ 10V | 660pF @ 10V | 4V, 10V | +10V, -20V |