Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
NP36P04SDG-E1-AY
RFQ
VIEW
RFQ
944
In-stock
Renesas Electronics America MOSFET P-CH 40V 36A TO-252 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (MP-3ZK) 1.2W (Ta), 56W (Tc) P-Channel - 40V 36A (Tc) 17 mOhm @ 18A, 10V 2.5V @ 250µA 55nC @ 10V 2800pF @ 10V 4.5V, 10V ±20V
TK65S04K3L(T6L1,NQ
RFQ
VIEW
RFQ
2,283
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 40V 65A DPAK-3 U-MOSIV Active Tape & Reel (TR) MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK+ 88W (Tc) N-Channel - 40V 65A (Ta) 4.5 mOhm @ 32.5A, 10V 3V @ 1mA 63nC @ 10V 2800pF @ 10V 6V, 10V ±20V