Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SUD50N03-06P-E3
RFQ
VIEW
RFQ
3,904
In-stock
Vishay Siliconix MOSFET N-CH 30V 84A TO252 TrenchFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 8.3W (Ta), 88W (Tc) N-Channel - 30V 84A (Tc) 6.5 mOhm @ 20A, 10V 3V @ 250µA 30nC @ 4.5V 3100pF @ 25V 4.5V, 10V ±20V
IRLR3802TRLPBF
RFQ
VIEW
RFQ
1,231
In-stock
Infineon Technologies MOSFET N-CH 12V 84A DPAK HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 88W (Tc) N-Channel - 12V 84A (Tc) 8.5 mOhm @ 15A, 4.5V 1.9V @ 250µA 41nC @ 5V 2490pF @ 6V 2.8V, 4.5V ±12V
IRLR3802TRPBF
RFQ
VIEW
RFQ
2,194
In-stock
Infineon Technologies MOSFET N-CH 12V 84A DPAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 88W (Tc) N-Channel - 12V 84A (Tc) 8.5 mOhm @ 15A, 4.5V 1.9V @ 250µA 41nC @ 5V 2490pF @ 6V 2.8V, 4.5V ±12V