Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RJK5002DPD-00#J2
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Renesas Electronics America MOSFET N-CH 500V 2.4A TO92 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 MP-3A 30W (Tc) N-Channel - 500V 2.4A (Ta) 5 Ohm @ 1.2A, 10V - 6.7nC @ 10V 165pF @ 25V 10V ±30V
RJK6002DPD-00#J2
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1,997
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Renesas Electronics America MOSFET N-CH 600V 2A MP3A - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 MP-3A 30W (Tc) N-Channel - 600V 2A (Ta) 6.8 Ohm @ 1A, 10V - 6.2nC @ 10V 165pF @ 25V 10V ±30V
RJK4002DPD-00#J2
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1,583
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Renesas Electronics America MOSFET N-CH 400V 3A MP3A - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 MP-3A 30W (Tc) N-Channel - 400V 3A (Ta) 2.9 Ohm @ 1.5A, 10V - 6nC @ 10V 165pF @ 25V 10V ±30V
TK380P60Y,RQ
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677
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Toshiba Semiconductor and Storage MOSFET N-CHANNEL 600V 9.7A DPAK DTMOSV Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 30W (Tc) N-Channel - 600V 9.7A (Tc) 380 mOhm @ 4.9A, 10V 4V @ 360µA 20nC @ 10V 590pF @ 300V 10V ±30V