- Manufacture :
- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
2,560
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 2.2A 6-WDFN | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) | 710mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 2.2A (Ta) | 100 mOhm @ 2A, 4.5V | 1V @ 250µA | 7.8nC @ 4.5V | 450pF @ 10V | 1.8V, 4.5V | ±8V | |||
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|
VIEW |
2,156
In-stock
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ON Semiconductor | MOSFET P-CH 20V 2.2A 6-WDFN | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) | 710mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 2.2A (Ta) | 100 mOhm @ 2A, 4.5V | 1V @ 250µA | 7.8nC @ 4.5V | 450pF @ 10V | 1.8V, 4.5V | ±8V | |||
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|
VIEW |
984
In-stock
|
ON Semiconductor | MOSFET P-CH 20V 2.3A 6-WDFN | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) | 710mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 2.3A (Ta) | 100 mOhm @ 2A, 4.5V | 1V @ 250µA | 6.2nC @ 4.5V | 531pF @ 10V | 1.8V, 4.5V | ±8V | |||
|
VIEW |
2,858
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 2.5A 6-WDFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) | 710mW (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 2.5A (Tj) | 70 mOhm @ 2A, 4.5V | 1V @ 250µA | 6.5nC @ 4.5V | 427pF @ 15V | 1.5V, 4.5V | ±8V | |||
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|
VIEW |
1,348
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 2.5A 6-WDFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) | 710mW (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 2.5A (Tj) | 70 mOhm @ 2A, 4.5V | 1V @ 250µA | 6.5nC @ 4.5V | 427pF @ 15V | 1.5V, 4.5V | ±8V | |||
|
|
VIEW |
1,506
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 2.5A 6-WDFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) | 710mW (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 2.5A (Tj) | 70 mOhm @ 2A, 4.5V | 1V @ 250µA | 6.5nC @ 4.5V | 427pF @ 15V | 1.5V, 4.5V | ±8V | |||
|
VIEW |
660
In-stock
|
Texas Instruments | MOSFET P-CH 15V 2.18A 16-TSSOP | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 16-TSSOP (0.173", 4.40mm Width) | 16-TSSOP | 710mW (Ta) | P-Channel | - | 15V | 2.18A (Ta) | 90 mOhm @ 2.5A, 10V | 1.5V @ 250µA | 11.25nC @ 10V | - | 2.7V, 10V | +2V, -15V | |||
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|
VIEW |
1,954
In-stock
|
ON Semiconductor | MOSFET N-CH 30V 2.5A 6-WDFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) | 710mW (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 2.5A (Tj) | 70 mOhm @ 2A, 4.5V | 1V @ 250µA | 6.5nC @ 4.5V | 427pF @ 15V | 1.5V, 4.5V | ±8V | |||
