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- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,407
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 5A S-MOS | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | 20V | 5A (Ta) | 28 mOhm @ 4A, 4V | - | 14.8nC @ 4V | 1120pF @ 10V | 1.5V, 4V | ±10V | |||
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VIEW |
3,119
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.8A UFM | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | 20V | 1.8A (Ta) | 149 mOhm @ 600mA, 4V | 1V @ 1mA | 7.7nC @ 4V | 331pF @ 10V | 1.5V, 4V | ±8V | |||
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VIEW |
2,731
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.8A UFM | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | 20V | 1.8A (Ta) | 149 mOhm @ 600mA, 4V | 1V @ 1mA | 7.7nC @ 4V | 331pF @ 10V | 1.5V, 4V | ±8V |