Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TJ15P04M3,RQ(S
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Toshiba Semiconductor and Storage MOSFET P-CH 40V 15A DPAK-3 U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 29W (Tc) P-Channel - 40V 15A (Ta) 36 mOhm @ 7.5A, 10V 2V @ 100µA 26nC @ 10V 1100pF @ 10V 4.5V, 10V ±20V
TPC8134,LQ(S
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1,114
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Toshiba Semiconductor and Storage MOSFET P-CH 40V 5A 8SOP U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOP 1W (Ta) P-Channel - 40V 5A (Ta) 52 mOhm @ 2.5A, 10V 2V @ 100µA 20nC @ 10V 890pF @ 10V 4.5V, 10V +20V, -25V
TPC6110(TE85L,F,M)
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780
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Toshiba Semiconductor and Storage MOSFET P-CH 30V 4.5A VS6 U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 VS-6 (2.9x2.8) 700mW (Ta) P-Channel - 30V 4.5A (Ta) 56 mOhm @ 2.2A, 10V 2V @ 100µA 14nC @ 10V 510pF @ 10V - -
SSM3J334R,LF
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3,442
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Toshiba Semiconductor and Storage MOSFET P CH 30V 4A SOT-23F U-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 30V 4A (Ta) 71 mOhm @ 3A, 10V 2V @ 100µA 5.9nC @ 10V 280pF @ 15V 4V, 10V ±20V