- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,288
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 60V 60A DPAK-3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 100W (Tc) | P-Channel | - | 60V | 60A (Ta) | 11.2 mOhm @ 30A, 10V | 3V @ 1mA | 156nC @ 10V | 7760pF @ 10V | 6V, 10V | +10V, -20V | |||
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VIEW |
3,971
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 60V 50A DPAK-3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 90W (Tc) | P-Channel | - | 60V | 50A (Ta) | 13.8 mOhm @ 25A, 10V | 3V @ 1mA | 124nC @ 10V | 6290pF @ 10V | 6V, 10V | +10V, -20V | |||
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VIEW |
2,803
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 60V 15A DPAK-3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 41W (Tc) | P-Channel | - | 60V | 15A (Ta) | 50 mOhm @ 7.5A, 10V | 3V @ 1mA | 36nC @ 10V | 1770pF @ 10V | 6V, 10V | +10V, -20V | |||
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VIEW |
3,505
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 60V 8A DPAK-3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 27W (Tc) | P-Channel | - | 60V | 8A (Ta) | 104 mOhm @ 4A, 10V | 3V @ 1mA | 19nC @ 10V | 890pF @ 10V | 6V, 10V | +10V, -20V | |||
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VIEW |
1,308
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 60V 30A DPAK-3 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK+ | 68W (Tc) | P-Channel | - | 60V | 30A (Ta) | 21.8 mOhm @ 15A, 10V | 3V @ 1mA | 80nC @ 10V | 3950pF @ 10V | 6V, 10V | +10V, -20V | |||
|
VIEW |
3,901
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 60V 2A SOT23F | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 60V | 2A (Ta) | 300 mOhm @ 1A, 10V | 2V @ 1mA | 8.3nC @ 10V | 330pF @ 10V | 4V, 10V | +10V, -20V | |||
|
VIEW |
1,647
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 60V 400MA S-MINI | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 1.2W (Ta) | P-Channel | - | 60V | 400mA (Ta) | 1.9 Ohm @ 100mA, 4.5V | 2V @ 1mA | 3nC @ 10V | 82pF @ 10V | 4V, 10V | +20V, -16V | |||
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VIEW |
3,157
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 60V 3.5A SOT23F | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 2W (Ta) | P-Channel | - | 60V | 3.5A (Ta) | 134 mOhm @ 1A, 10V | 2V @ 1mA | 15.1nC @ 10V | 660pF @ 10V | 4V, 10V | +10V, -20V | |||
