- Part Status :
- Operating Temperature :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,108
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.8A UFM | U-MOSIII | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 20V | 1.8A (Ta) | 158 mOhm @ 800mA, 4V | 1V @ 1mA | - | 250pF @ 10V | 1.8V, 4V | ±8V | |||
|
VIEW |
1,083
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 1.9A UFV | U-MOSIII | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD (5 Leads), Flat Lead | UFV | 500mW (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 1.9A (Ta) | 133 mOhm @ 1A, 4V | 1V @ 1mA | 1.9nC @ 4V | 123pF @ 15V | 1.8V, 4V | ±12V | |||
|
VIEW |
1,871
In-stock
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Toshiba Semiconductor and Storage | SMALL LOW ON RESISTANCE MOSFET | U-MOSIII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-723 | VESM | 500mW (Ta) | N-Channel | - | 20V | 250mA (Ta) | 1.1 Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | 36pF @ 10V | 1.2V, 4.5V | ±10V | |||
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|
VIEW |
733
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.5A UFV | U-MOSIII | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD (5 Leads), Flat Lead | UFV | 500mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 1.5A (Ta) | 213 mOhm @ 1A, 4V | 1V @ 1mA | 6.4nC @ 4V | 250pF @ 10V | 1.8V, 4V | ±8V | |||
|
VIEW |
1,305
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.18A | U-MOSIII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | CST3C | 500mW (Ta) | N-Channel | - | 20V | 250mA (Ta) | 1.1 Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | 36pF @ 10V | 1.2V, 4.5V | ±10V | |||
|
VIEW |
3,072
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 4.2A | U-MOSIII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 | 500mW (Ta) | N-Channel | - | 20V | 4.2A (Ta) | 28 mOhm @ 3A, 4V | 1V @ 1mA | 16.8nC @ 4V | 1050pF @ 10V | 1.5V, 4V | ±10V | |||
|
VIEW |
2,615
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 3.2A ES6 | U-MOSIII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | N-Channel | - | 20V | 3.2A (Ta) | 47 mOhm @ 2A, 4.5V | 1V @ 1mA | 10.8nC @ 4.5V | 510pF @ 10V | 1.5V, 4.5V | ±10V | |||
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|
VIEW |
2,935
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.2A UFM | U-MOSIII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | N-Channel | - | 30V | 2.2A (Ta) | 100 mOhm @ 500mA, 4.5V | 1.1V @ 100µA | - | 245pF @ 10V | 2.5V, 4.5V | ±12V | |||
|
VIEW |
1,790
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 20V 250MA SSM | U-MOSIII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM | 500mW (Ta) | N-Channel | - | 20V | 250mA (Ta) | 1.1 Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | 36pF @ 10V | 1.2V, 4.5V | ±10V | |||
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|
VIEW |
2,455
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 100MA CST3C | U-MOSIII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C | Surface Mount | SC-101, SOT-883 | CST3C | 500mW (Ta) | N-Channel | - | 30V | 100mA (Ta) | 3.6 Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 13.5pF @ 3V | 2.5V, 4V | ±20V | |||
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|
VIEW |
2,701
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 4.2A UFM | U-MOSIII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | N-Channel | - | 20V | 4.2A (Ta) | 28 mOhm @ 3A, 4V | 1V @ 1mA | 13.6nC @ 4V | 1010pF @ 10V | 1.5V, 4V | ±10V | |||
