- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,930
In-stock
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Renesas Electronics America | MOSFET N-CH 55V 90A TO-220 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 1.2W (Ta), 147W (Tc) | N-Channel | - | 55V | 90A (Tc) | 3.85 mOhm @ 45A, 5V | 4V @ 250µA | 102nC @ 10V | 6000pF @ 25V | 10V | ±20V | |||
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VIEW |
2,139
In-stock
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Renesas Electronics America | MOSFET N-CH 55V 60A TO-252 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 1.2W (Ta), 105W (Tc) | N-Channel | - | 55V | 60A (Tc) | 5.5 mOhm @ 30A, 10V | 4V @ 253µA | 63nC @ 10V | 3750pF @ 25V | 10V | ±20V | |||
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VIEW |
2,770
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 90A DPAK | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | 157W (Tc) | N-Channel | - | 60V | 90A (Ta) | 3.3 mOhm @ 45A, 10V | 2.5V @ 500µA | 81nC @ 10V | 5400pF @ 10V | 4.5V, 10V | ±20V | |||
