Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TPC6012(TE85L,F,M)
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1,360
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Toshiba Semiconductor and Storage MOSFET N-CH 20V 6A VS6 U-MOSIV Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 VS-6 (2.9x2.8) 700mW (Ta) N-Channel 20V 6A (Ta) 20 mOhm @ 3A, 4.5V 1.2V @ 200µA 9nC @ 5V 630pF @ 10V 2.5V, 4.5V ±12V
TPC6011(TE85L,F,M)
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1,121
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 6A VS6 U-MOSIV Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 VS-6 (2.9x2.8) 700mW (Ta) N-Channel 30V 6A (Ta) 20 mOhm @ 3A, 10V 2.5V @ 1mA 14nC @ 10V 640pF @ 10V 4.5V, 10V ±20V
SSM3K315T(TE85L,F)
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1,093
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 6A TSM U-MOSIV Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) N-Channel 30V 6A (Ta) 27.6 mOhm @ 4A, 10V 2.5V @ 1mA 10.1nC @ 10V 450pF @ 15V 4.5V, 10V ±20V
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1,074
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Toshiba Semiconductor and Storage MOSFET P-CH 20V 6A VS8 2-3U1A U-MOSIII Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SMD, Flat Lead VS-8 (2.9x1.5) 700mW (Ta) P-Channel 20V 6A (Ta) 30 mOhm @ 3A, 4.5V 1.2V @ 200µA 19nC @ 5V 1550pF @ 10V 1.8V, 4.5V ±8V
RQ1A060ZPTR
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715
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Rohm Semiconductor MOSFET P-CH 12V 6A TSMT8 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SMD, Flat Lead TSMT8 700mW (Ta) P-Channel 12V 6A (Ta) 23 mOhm @ 6A, 4.5V 1V @ 1mA 34nC @ 4.5V 2800pF @ 6V 1.5V, 4.5V ±10V