Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
NTLJD3182FZTBG
RFQ
VIEW
RFQ
2,560
In-stock
ON Semiconductor MOSFET P-CH 20V 2.2A 6-WDFN - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-WDFN (2x2) 710mW (Ta) P-Channel Schottky Diode (Isolated) 20V 2.2A (Ta) 100 mOhm @ 2A, 4.5V 1V @ 250µA 7.8nC @ 4.5V 450pF @ 10V 1.8V, 4.5V ±8V
NTLJD3182FZTAG
RFQ
VIEW
RFQ
2,156
In-stock
ON Semiconductor MOSFET P-CH 20V 2.2A 6-WDFN - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-WDFN (2x2) 710mW (Ta) P-Channel Schottky Diode (Isolated) 20V 2.2A (Ta) 100 mOhm @ 2A, 4.5V 1V @ 250µA 7.8nC @ 4.5V 450pF @ 10V 1.8V, 4.5V ±8V
NTLJF3117PTAG
RFQ
VIEW
RFQ
984
In-stock
ON Semiconductor MOSFET P-CH 20V 2.3A 6-WDFN - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-WDFN (2x2) 710mW (Ta) P-Channel Schottky Diode (Isolated) 20V 2.3A (Ta) 100 mOhm @ 2A, 4.5V 1V @ 250µA 6.2nC @ 4.5V 531pF @ 10V 1.8V, 4.5V ±8V
NTLJF4156NTAG
RFQ
VIEW
RFQ
2,858
In-stock
ON Semiconductor MOSFET N-CH 30V 2.5A 6-WDFN - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-WDFN (2x2) 710mW (Ta) N-Channel Schottky Diode (Isolated) 30V 2.5A (Tj) 70 mOhm @ 2A, 4.5V 1V @ 250µA 6.5nC @ 4.5V 427pF @ 15V 1.5V, 4.5V ±8V
NTLJF4156NTAG
RFQ
VIEW
RFQ
1,348
In-stock
ON Semiconductor MOSFET N-CH 30V 2.5A 6-WDFN - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-WDFN (2x2) 710mW (Ta) N-Channel Schottky Diode (Isolated) 30V 2.5A (Tj) 70 mOhm @ 2A, 4.5V 1V @ 250µA 6.5nC @ 4.5V 427pF @ 15V 1.5V, 4.5V ±8V
NTLJF4156NTAG
RFQ
VIEW
RFQ
1,506
In-stock
ON Semiconductor MOSFET N-CH 30V 2.5A 6-WDFN - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-WDFN (2x2) 710mW (Ta) N-Channel Schottky Diode (Isolated) 30V 2.5A (Tj) 70 mOhm @ 2A, 4.5V 1V @ 250µA 6.5nC @ 4.5V 427pF @ 15V 1.5V, 4.5V ±8V
NTLJF3117PT1G
RFQ
VIEW
RFQ
866
In-stock
ON Semiconductor MOSFET P-CH 20V 2.3A 6-WDFN µCool™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-WDFN (2x2) 710mW (Ta) P-Channel Schottky Diode (Isolated) 20V 2.3A (Ta) 100 mOhm @ 2A, 4.5V 1V @ 250µA 6.2nC @ 4.5V 531pF @ 10V 1.8V, 4.5V ±8V
NTLJF4156NT1G
RFQ
VIEW
RFQ
1,954
In-stock
ON Semiconductor MOSFET N-CH 30V 2.5A 6-WDFN - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-WDFN (2x2) 710mW (Ta) N-Channel Schottky Diode (Isolated) 30V 2.5A (Tj) 70 mOhm @ 2A, 4.5V 1V @ 250µA 6.5nC @ 4.5V 427pF @ 15V 1.5V, 4.5V ±8V