Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
PMN23UN,165
RFQ
VIEW
RFQ
1,023
In-stock
NXP USA Inc. MOSFET N-CH 20V 6.3A 6TSOP TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-74, SOT-457 6-TSOP 1.75W (Tc) N-Channel - 20V 6.3A (Tc) 28 mOhm @ 2A, 4.5V 700mV @ 1mA 10.6nC @ 4.5V 740pF @ 10V 1.8V, 4.5V ±8V
PMN23UN,135
RFQ
VIEW
RFQ
1,711
In-stock
NXP USA Inc. MOSFET N-CH 20V 6.3A 6TSOP TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SC-74, SOT-457 6-TSOP 1.75W (Tc) N-Channel - 20V 6.3A (Tc) 28 mOhm @ 2A, 4.5V 700mV @ 1mA 10.6nC @ 4.5V 740pF @ 10V 1.8V, 4.5V ±8V
SI3456DDV-T1-E3
RFQ
VIEW
RFQ
2,086
In-stock
Vishay Siliconix MOSFET N-CH 30V 6.3A 6TSOP TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 1.7W (Ta), 2.7W (Tc) N-Channel - 30V 6.3A (Tc) 40 mOhm @ 5A, 10V 3V @ 250µA 9nC @ 10V 325pF @ 15V 4.5V, 10V ±20V
SI3456DDV-T1-GE3
RFQ
VIEW
RFQ
988
In-stock
Vishay Siliconix MOSFET N-CH 30V 6.3A 6-TSOP TrenchFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 1.7W (Ta), 2.7W (Tc) N-Channel - 30V 6.3A (Tc) 40 mOhm @ 5A, 10V 3V @ 250µA 9nC @ 10V 325pF @ 15V 4.5V, 10V ±20V