- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
2,788
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 10A 8SOP | U-MOSV-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | N-Channel | Schottky Diode (Body) | 30V | 10A (Ta) | 13.3 mOhm @ 5A, 10V | 2.3V @ 1mA | 15nC @ 10V | 1700pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
2,794
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 12A SOP8 2-6J1B | U-MOSV-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | - | N-Channel | - | 30V | 12A (Ta) | 11.4 mOhm @ 6A, 10V | 2.5V @ 1mA | 21nC @ 10V | 2150pF @ 10V | - | - | |||
