Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Diodes Incorporated MOSFET P-CH 30V 4A SC59 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SC-59 1.1W (Ta) P-Channel 30V 4A (Ta) 50 mOhm @ 4.1A, 10V 2.1V @ 250µA 16nC @ 10V 700pF @ 15V 4.5V, 10V ±20V
2SJ168TE85LF
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3,270
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Toshiba Semiconductor and Storage MOSFET P-CH 60V 0.2A S-MINI - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SC-59 200mW (Ta) P-Channel 60V 200mA (Ta) 2 Ohm @ 50mA, 10V - - 85pF @ 10V 10V ±20V
2SJ305TE85LF
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3,984
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Toshiba Semiconductor and Storage MOSFET P-CH 30V 0.2A S-MINI - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SC-59 200mW (Ta) P-Channel 30V 200mA (Ta) 4 Ohm @ 50mA, 2.5V - - 92pF @ 3V 2.5V ±20V
DMG3401LSN-7
RFQ
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RFQ
1,823
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Diodes Incorporated MOSFET P-CH 30V 3A SC59 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SC-59 800mW (Ta) P-Channel 30V 3A (Ta) 50 mOhm @ 4A, 10V 1.3V @ 250µA 25.1nC @ 10V 1326pF @ 15V 2.5V, 10V ±12V