Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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1,664
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Vishay Siliconix MOSFET N-CH 650V TO263 S Last Time Buy - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263) 250W (Tc) N-Channel 600V 22A (Tc) 190 mOhm @ 11A, 10V 4V @ 250µA 110nC @ 10V 2.81nF @ 25V 10V ±30V
IXFA22N60P3
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2,743
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IXYS MOSFET N-CH HiPerFET™, Polar3™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263AA 500W (Tc) N-Channel 600V 22A (Tc) 390 mOhm @ 11A, 10V 5V @ 1.5mA 38nC @ 10V 2600pF @ 25V 10V ±30V
STI28N60M2
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3,747
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STMicroelectronics MOSFET N-CH 600V 22A I2PAK MDmesh™ M2 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK (TO-262) 170W (Tc) N-Channel 600V 22A (Tc) 150 mOhm @ 11A, 10V 4V @ 250µA 36nC @ 10V 1440pF @ 100V 10V ±25V
IXFP22N65X2M
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3,023
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IXYS MOSFET N-CH HiPerFET™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Isolated Tab 37W (Tc) N-Channel 650V 22A (Tc) 145 mOhm @ 11A, 10V 5V @ 1.5mA 37nC @ 10V 2190pF @ 25V 10V ±30V