- Part Status :
- Operating Temperature :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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9 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,938
In-stock
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NXP USA Inc. | MOSFET N-CH 200V 14A TO220AB | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 125W (Tc) | N-Channel | - | 200V | 14A (Tc) | 230 mOhm @ 7A, 10V | 4V @ 1mA | 38nC @ 10V | 1500pF @ 25V | 10V | ±20V | |||
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VIEW |
3,607
In-stock
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STMicroelectronics | MOSFET N-CH 200V 18A TO-220 | MESH OVERLAY™ | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 125W (Tc) | N-Channel | - | 200V | 18A (Tc) | 180 mOhm @ 9A, 10V | 4V @ 250µA | 72nC @ 10V | 1560pF @ 25V | 10V | ±20V | |||
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VIEW |
3,923
In-stock
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Infineon Technologies | MOSFET N-CH 200V 21A TO-220AB | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 125W (Tc) | N-Channel | - | 200V | 21A (Tc) | 130 mOhm @ 13.5A, 10V | 4V @ 1mA | - | 1900pF @ 25V | 10V | ±20V | |||
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VIEW |
2,852
In-stock
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Vishay Siliconix | MOSFET P-CH 200V 11A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 125W (Tc) | P-Channel | - | 200V | 11A (Tc) | 500 mOhm @ 6.6A, 10V | 4V @ 250µA | 44nC @ 10V | 1200pF @ 25V | 10V | ±20V | |||
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VIEW |
829
In-stock
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STMicroelectronics | MOSFET N-CH 200V 30A TO-247 | STripFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 125W (Tc) | N-Channel | - | 200V | 30A (Tc) | 75 mOhm @ 15A, 10V | 4V @ 250µA | 38nC @ 10V | 1597pF @ 25V | 10V | ±20V | |||
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VIEW |
997
In-stock
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Infineon Technologies | MOSFET N-CH 200V 21A TO220-3 | SIPMOS® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 125W (Tc) | N-Channel | - | 200V | 21A (Tc) | 130 mOhm @ 13.5A, 10V | 4V @ 1mA | - | 1900pF @ 25V | 10V | ±20V | |||
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VIEW |
3,736
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 18A TO-220-5 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 | 125W (Tc) | N-Channel | Current Sensing | 200V | 18A (Tc) | 180 mOhm @ 11A, 10V | 4V @ 250µA | 70nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
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VIEW |
2,060
In-stock
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STMicroelectronics | MOSFET N-CH 200V 30A TO-220 | STripFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 125W (Tc) | N-Channel | - | 200V | 30A (Tc) | 75 mOhm @ 15A, 10V | 4V @ 250µA | 38nC @ 10V | 1597pF @ 25V | 10V | ±20V | |||
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VIEW |
2,970
In-stock
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Vishay Siliconix | MOSFET P-CH 200V 11A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 125W (Tc) | P-Channel | - | 200V | 11A (Tc) | 500 mOhm @ 6.6A, 10V | 4V @ 250µA | 44nC @ 10V | 1200pF @ 25V | 10V | ±20V |