- Series :
- Part Status :
- Operating Temperature :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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5 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
707
In-stock
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ON Semiconductor | MOSFET P-CH 200V 6A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 75W (Tc) | P-Channel | - | 200V | 6A (Tc) | 1 Ohm @ 3A, 10V | 4V @ 250µA | 30nC @ 10V | 750pF @ 25V | 10V | ±20V | |||
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VIEW |
3,610
In-stock
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Infineon Technologies | MOSFET N-CH 200V 9.5A TO-263 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3 | 75W (Tc) | N-Channel | - | 200V | 9.5A (Tc) | 400 mOhm @ 6A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V | |||
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VIEW |
1,341
In-stock
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Infineon Technologies | MOSFET N-CH 200V 9.5A TO220AB | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 75W (Tc) | N-Channel | - | 200V | 9.5A (Tc) | 400 mOhm @ 6A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V | |||
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VIEW |
3,467
In-stock
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Infineon Technologies | MOSFET N-CH 200V 9.5A TO220-3 | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 75W (Tc) | N-Channel | - | 200V | 9.5A (Tc) | 400 mOhm @ 6A, 10V | 4V @ 1mA | - | 530pF @ 25V | 10V | ±20V | |||
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VIEW |
1,111
In-stock
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STMicroelectronics | MOSFET N-CH 200V 9A TO-220 | MESH OVERLAY™ II | Active | Tube | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 75W (Tc) | N-Channel | - | 200V | 9A (Tc) | 400 mOhm @ 4.5A, 10V | 4V @ 250µA | 45nC @ 10V | 700pF @ 25V | 10V | ±20V |