Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTK140N20P
RFQ
VIEW
RFQ
2,578
In-stock
IXYS MOSFET N-CH 200V 140A TO-264 PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 (IXTK) 800W (Tc) N-Channel - 200V 140A (Tc) 18 mOhm @ 70A, 10V 5V @ 500µA 240nC @ 10V 7500pF @ 25V 10V ±20V
IXTK120N20P
RFQ
VIEW
RFQ
1,283
In-stock
IXYS MOSFET N-CH 200V 120A TO-264 PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 (IXTK) 714W (Tc) N-Channel - 200V 120A (Tc) 22 mOhm @ 500mA, 10V 5V @ 250µA 152nC @ 10V 6000pF @ 25V 10V ±20V
IXTK160N20
RFQ
VIEW
RFQ
3,441
In-stock
IXYS MOSFET N-CH 200V 160A TO-264 MegaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 (IXTK) 730W (Tc) N-Channel - 200V 160A (Tc) 13 mOhm @ 500mA, 10V 4V @ 250µA 415nC @ 10V 12900pF @ 25V 10V ±20V
IXTK110N20L2
RFQ
VIEW
RFQ
3,138
In-stock
IXYS MOSFET N-CH 200V 110A TO-264 Linear L2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 (IXTK) 960W (Tc) N-Channel - 200V 110A (Tc) 24 mOhm @ 55A, 10V 4.5V @ 3mA 500nC @ 10V 23000pF @ 25V 10V ±20V
IXTK90P20P
RFQ
VIEW
RFQ
900
In-stock
IXYS MOSFET P-CH 200V 90A TO-264 PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 (IXTK) 890W (Tc) P-Channel - 200V 90A (Tc) 44 mOhm @ 500mA, 10V 4V @ 1mA 205nC @ 10V 12000pF @ 25V 10V ±20V