- Manufacture :
- Series :
- Part Status :
- Operating Temperature :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
10 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
1,272
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 5A DPAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 43W (Tc) | N-Channel | 200V | 5A (Ta) | 600 mOhm @ 2.9A, 10V | 4V @ 250µA | 23nC @ 10V | 300pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,266
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 24A D-PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 144W (Tc) | N-Channel | 200V | 24A (Tc) | 78 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | |||
,%20SC-63.jpg)
|
VIEW |
1,557
In-stock
|
Vishay Siliconix | MOSFET P-CH 200V 3.6A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 42W (Tc) | P-Channel | 200V | 3.6A (Tc) | 1.5 Ohm @ 2.2A, 10V | 4V @ 250µA | 20nC @ 10V | 340pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,470
In-stock
|
Vishay Siliconix | MOSFET N-CH 200V 2.6A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 25W (Tc) | N-Channel | 200V | 2.6A (Tc) | 1.5 Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
1,744
In-stock
|
Vishay Siliconix | MOSFET P-CH 200V 1.9A DPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 25W (Tc) | P-Channel | 200V | 1.9A (Tc) | 3 Ohm @ 1.1A, 10V | 4V @ 250µA | 8.9nC @ 10V | 170pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,563
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 5A DPAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 43W (Tc) | N-Channel | 200V | 5A (Tc) | 600 mOhm @ 2.9A, 10V | 4V @ 250µA | 23nC @ 10V | 300pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,455
In-stock
|
Vishay Siliconix | MOSFET N-CH 200V 2.6A DPAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 25W (Tc) | N-Channel | 200V | 2.6A (Tc) | 1.5 Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
699
In-stock
|
Vishay Siliconix | MOSFET P-CH 200V 3.6A DPAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 42W (Tc) | P-Channel | 200V | 3.6A (Tc) | 1.5 Ohm @ 2.2A, 10V | 4V @ 250µA | 20nC @ 10V | 340pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,523
In-stock
|
Vishay Siliconix | MOSFET P-CH 200V 1.9A DPAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 25W (Tc) | P-Channel | 200V | 1.9A (Tc) | 3 Ohm @ 1.1A, 10V | 4V @ 250µA | 8.9nC @ 10V | 170pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,333
In-stock
|
Vishay Siliconix | MOSFET N-CH 200V 4.8A DPAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 42W (Tc) | N-Channel | 200V | 4.8A (Tc) | 800 mOhm @ 2.9A, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
