- Series :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Feature :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
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9 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,880
In-stock
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Renesas Electronics America | MOSFET N-CH 400V 8A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FL | 29W (Tc) | N-Channel | - | 400V | 8A (Ta) | 800 mOhm @ 4A, 10V | - | 20nC @ 10V | 620pF @ 25V | 10V | ±30V | ||||
VIEW |
1,144
In-stock
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Renesas Electronics America | MOSFET N-CH 900V 8A TO-3P | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 60W (Tc) | N-Channel | - | 900V | 8A (Ta) | 1.6 Ohm @ 4A, 10V | - | - | 1730pF @ 10V | 10V | ±30V | ||||
VIEW |
1,120
In-stock
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Renesas Electronics America | MOSFET N-CH 900V 6A TO-3P | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 100W (Tc) | N-Channel | - | 900V | 8A (Ta) | 1.6 Ohm @ 4A, 10V | - | - | 1730pF @ 10V | 10V | ±30V | ||||
VIEW |
920
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 600V 8A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 80W (Tc) | N-Channel | Super Junction | 600V | 8A (Ta) | 500 mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5nC @ 10V | 570pF @ 300V | 10V | ±30V | ||||
VIEW |
1,492
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 600V 8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | Super Junction | 600V | 8A (Ta) | 500 mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5nC @ 10V | 570pF @ 300V | 10V | ±30V | ||||
VIEW |
3,943
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 900V 8A TO-3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N)IS | 85W (Tc) | N-Channel | - | 900V | 8A (Ta) | 1.4 Ohm @ 4A, 10V | 4V @ 1mA | 58nC @ 10V | 2040pF @ 25V | 10V | ±30V | ||||
VIEW |
643
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 450V 8A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 450V | 8A (Ta) | 900 mOhm @ 4A, 10V | 4.4V @ 1mA | 16nC @ 10V | 700pF @ 25V | 10V | ±30V | ||||
VIEW |
2,957
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V 8A TO220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 500V | 8A (Ta) | 850 mOhm @ 4A, 10V | 4V @ 1mA | 16nC @ 10V | 800pF @ 25V | 10V | ±30V | ||||
VIEW |
3,842
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 8A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 8A (Ta) | 540 mOhm @ 4A, 10V | 4.5V @ 400µA | 22nC @ 10V | 590pF @ 300V | 10V | ±30V |