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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	APT30M40JVFR	RFQ VIEW	PDF RFQ	1,986 In-stock	Microsemi Corporation	MOSFET N-CH 300V 70A SOT-227		POWER MOS V®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	ISOTOP®	450W (Tc)	N-Channel	-	300V	70A (Tc)	40 mOhm @ 500mA, 10V	4V @ 2.5mA	425nC @ 10V	10200pF @ 25V	10V	±30V
	APT30M40JVR	RFQ VIEW	PDF RFQ	3,103 In-stock	Microsemi Corporation	MOSFET N-CH 300V 70A SOT-227		POWER MOS V®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	ISOTOP®	450W (Tc)	N-Channel	-	300V	70A (Tc)	40 mOhm @ 500mA, 10V	4V @ 2.5mA	425nC @ 10V	10200pF @ 25V	10V	±30V
	APT20M22LVFRG	RFQ VIEW	PDF RFQ	717 In-stock	Microsemi Corporation	MOSFET N-CH 200V 100A TO-264		POWER MOS V®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264 [L]	520W (Tc)	N-Channel	-	200V	100A (Tc)	22 mOhm @ 500mA, 10V	4V @ 2.5mA	435nC @ 10V	10200pF @ 25V	10V	±30V
	IXTT30N50L	RFQ VIEW	PDF RFQ	3,752 In-stock	IXYS	MOSFET N-CH 500V 30A TO-268		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	TO-268	400W (Tc)	N-Channel	-	500V	30A (Tc)	200 mOhm @ 15A, 10V	4.5V @ 250µA	240nC @ 10V	10200pF @ 25V	10V	±20V
	IXTQ30N50L	RFQ VIEW	PDF RFQ	1,484 In-stock	IXYS	MOSFET N-CH 500V 30A TO-3P		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P	400W (Tc)	N-Channel	-	500V	30A (Tc)	200 mOhm @ 15A, 10V	4.5V @ 250µA	240nC @ 10V	10200pF @ 25V	10V	±20V
	IXTH30N50L	RFQ VIEW	PDF RFQ	951 In-stock	IXYS	MOSFET N-CH 500V 30A TO-247		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 (IXTH)	400W (Tc)	N-Channel	-	500V	30A (Tc)	200 mOhm @ 15A, 10V	4.5V @ 250µA	240nC @ 10V	10200pF @ 25V	10V	±20V
	APT20M22B2VRG	RFQ VIEW	PDF RFQ	1,500 In-stock	Microsemi Corporation	MOSFET N-CH 200V 100A T-MAX		POWER MOS V®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	T-MAX™ [B2]	520W (Tc)	N-Channel	-	200V	100A (Tc)	22 mOhm @ 500mA, 10V	4V @ 2.5mA	435nC @ 10V	10200pF @ 25V	10V	±30V
	APT20M22B2VFRG	RFQ VIEW	PDF RFQ	1,062 In-stock	Microsemi Corporation	MOSFET N-CH 200V 100A T-MAX		POWER MOS V®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3 Variant	T-MAX™ [B2]	520W (Tc)	N-Channel	-	200V	100A (Tc)	22 mOhm @ 500mA, 10V	4V @ 2.5mA	435nC @ 10V	10200pF @ 25V	10V	±30V
	APT20M22LVRG	RFQ VIEW	PDF RFQ	3,208 In-stock	Microsemi Corporation	MOSFET N-CH 200V 100A TO-264		POWER MOS V®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-264-3, TO-264AA	TO-264 [L]	520W (Tc)	N-Channel	-	200V	100A (Tc)	22 mOhm @ 500mA, 10V	4V @ 2.5mA	435nC @ 10V	10200pF @ 25V	10V	±30V

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