Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFS4710PBF
RFQ
VIEW
RFQ
1,960
In-stock
Infineon Technologies MOSFET N-CH 100V 75A D2PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 200W (Tc) N-Channel - 100V 75A (Tc) 14 mOhm @ 45A, 10V 5.5V @ 250µA 170nC @ 10V 6160pF @ 25V 10V ±20V
IRFPS29N60LPBF
RFQ
VIEW
RFQ
1,550
In-stock
Vishay Siliconix MOSFET N-CH 600V 29A SUPER247 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-274AA SUPER-247 (TO-274AA) 480W (Tc) N-Channel - 600V 29A (Tc) 210 mOhm @ 17A, 10V 5V @ 250µA 220nC @ 10V 6160pF @ 25V 10V ±30V
IRFSL4710PBF
RFQ
VIEW
RFQ
3,156
In-stock
Infineon Technologies MOSFET N-CH 100V 75A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 200W (Tc) N-Channel - 100V 75A (Tc) 14 mOhm @ 45A, 10V 5.5V @ 250µA 170nC @ 10V 6160pF @ 25V 10V ±20V
IRFB4710PBF
RFQ
VIEW
RFQ
1,269
In-stock
Infineon Technologies MOSFET N-CH 100V 75A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 3.8W (Ta), 200W (Tc) N-Channel - 100V 75A (Tc) 14 mOhm @ 45A, 10V 5.5V @ 250µA 170nC @ 10V 6160pF @ 25V 10V ±20V
IXTH80N20L
RFQ
VIEW
RFQ
881
In-stock
IXYS MOSFET N-CH 200V 80A TO-247 Linear™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 520W (Tc) N-Channel - 200V 80A (Tc) 32 mOhm @ 40A, 10V 4V @ 250µA 180nC @ 10V 6160pF @ 25V 10V ±20V
IXTT80N20L
RFQ
VIEW
RFQ
3,353
In-stock
IXYS MOSFET N-CH 200V 80A TO-268 Linear™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 520W (Tc) N-Channel - 200V 80A (Tc) 32 mOhm @ 40A, 10V 4V @ 250µA 180nC @ 10V 6160pF @ 25V 10V ±20V
IRFP4710PBF
RFQ
VIEW
RFQ
700
In-stock
Infineon Technologies MOSFET N-CH 100V 72A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 190W (Tc) N-Channel - 100V 72A (Tc) 14 mOhm @ 45A, 10V 5.5V @ 250µA 170nC @ 10V 6160pF @ 25V 10V ±20V