Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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NTP52N10G
RFQ
VIEW
RFQ
2,378
In-stock
ON Semiconductor MOSFET N-CH 100V 60A TO220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 214W (Tc) N-Channel - 100V 60A (Ta) 30 mOhm @ 26A, 10V 4V @ 250µA 135nC @ 10V 3150pF @ 25V 10V ±20V
NTP52N10
RFQ
VIEW
RFQ
1,666
In-stock
ON Semiconductor MOSFET N-CH 100V 60A TO220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 214W (Tc) N-Channel - 100V 60A (Ta) 30 mOhm @ 26A, 10V 4V @ 250µA 135nC @ 10V 3150pF @ 25V 10V ±20V
NTB52N10G
RFQ
VIEW
RFQ
3,060
In-stock
ON Semiconductor MOSFET N-CH 100V 52A D2PAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 2W (Ta), 178W (Tc) N-Channel - 100V 52A (Tc) 30 mOhm @ 26A, 10V 4V @ 250µA 135nC @ 10V 3150pF @ 25V 10V ±20V
IXFT70N20Q3
RFQ
VIEW
RFQ
2,061
In-stock
IXYS MOSFET N-CH 200V 70A TO-268 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 690W (Tc) N-Channel - 200V 70A (Tc) 40 mOhm @ 35A, 10V 6.5V @ 4mA 67nC @ 10V 3150pF @ 25V 10V ±20V
IXFH70N20Q3
RFQ
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RFQ
2,469
In-stock
IXYS MOSFET N-CH 200V 70A TO-247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 690W (Tc) N-Channel - 200V 70A (Tc) 40 mOhm @ 35A, 10V 6.5V @ 4mA 67nC @ 10V 3150pF @ 25V 10V ±20V