- Manufacture :
- Series :
- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,747
In-stock
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NXP USA Inc. | MOSFET N-CH 40V 75A TO220AB | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 157W (Tc) | N-Channel | - | 40V | 75A (Tc) | 8 mOhm @ 25A, 10V | 4V @ 1mA | 36.6nC @ 10V | 2020pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,217
In-stock
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ON Semiconductor | MOSFET N-CH 500V 12.1A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.13W (Ta), 179W (Tc) | N-Channel | - | 500V | 12.1A (Tc) | 490 mOhm @ 6.05A, 10V | 5V @ 250µA | 51nC @ 10V | 2020pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,413
In-stock
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Infineon Technologies | MOSFET N-CH 150V 33A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 170W (Tc) | N-Channel | - | 150V | 33A (Tc) | 56 mOhm @ 20A, 10V | 5.5V @ 250µA | 90nC @ 10V | 2020pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,163
In-stock
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Infineon Technologies | MOSFET N-CH 150V 33A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 3.8W (Ta), 170W (Tc) | N-Channel | - | 150V | 33A (Tc) | 56 mOhm @ 20A, 10V | 5.5V @ 250µA | 90nC @ 10V | 2020pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,705
In-stock
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Infineon Technologies | MOSFET N-CH 150V 33A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 170W (Tc) | N-Channel | - | 150V | 33A (Tc) | 56 mOhm @ 20A, 10V | 5.5V @ 250µA | 90nC @ 10V | 2020pF @ 25V | 10V | ±30V | |||
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|
VIEW |
1,607
In-stock
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Infineon Technologies | MOSFET N-CH 150V 33A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 170W (Tc) | N-Channel | - | 150V | 33A (Tc) | 56 mOhm @ 20A, 10V | 5.5V @ 250µA | 90nC @ 10V | 2020pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,519
In-stock
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ON Semiconductor | MOSFET N-CH 60V 50A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 131W (Tc) | N-Channel | - | 60V | 50A (Tc) | 22 mOhm @ 50A, 10V | 4V @ 250µA | 150nC @ 20V | 2020pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,671
In-stock
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Infineon Technologies | MOSFET N-CH 150V 33A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 3.8W (Ta), 170W (Tc) | N-Channel | - | 150V | 33A (Tc) | 56 mOhm @ 20A, 10V | 5.5V @ 250µA | 90nC @ 10V | 2020pF @ 25V | 10V | ±30V | |||
