Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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1,668
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Microsemi Corporation MOSFET N-CH 400V 11A TO247AD POWER MOS IV® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD 180W (Tc) N-Channel 400V 11A (Tc) 650 mOhm @ 5.5A, 10V 4V @ 1mA 55nC @ 10V 950pF @ 25V 10V ±30V
GP1M018A020HG
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2,221
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Global Power Technologies Group MOSFET N-CH 200V 18A TO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 94W (Tc) N-Channel 200V 18A (Tc) 170 mOhm @ 9A, 10V 5V @ 250µA 18nC @ 10V 950pF @ 25V 10V ±30V
FDP20AN06A0
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3,277
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ON Semiconductor MOSFET N-CH 60V 45A TO-220AB PowerTrench® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 90W (Tc) N-Channel 60V 9A (Ta), 45A (Tc) 20 mOhm @ 45A, 10V 4V @ 250µA 19nC @ 10V 950pF @ 25V 10V ±20V
GP1M018A020PG
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3,096
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Global Power Technologies Group MOSFET N-CH 200V 18A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 94W (Tc) N-Channel 200V 18A (Tc) 170 mOhm @ 9A, 10V 5V @ 250µA 18nC @ 10V 950pF @ 25V 10V ±30V